Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions

Details Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions

2007-02-14

arxiv.org/abs/cond-mat/0702324v2

Physics

Condensed Matter

Materials Science

4 pages

Scientific paper

Based on the Gauss law for the electric field, a new integral formula is
deduced together with one of its possible applications, in the area of
semiconductor junctions, specifically an analytical formula for the built-in
potential of diffused semiconductor junctions. The measurement technique for
the determination of the built-in voltage is also described.

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