Tunneling Conductance Between Parallel Two Dimensional Electron Systems

Details Tunneling Conductance Between Parallel Two Dimensional Electron Systems Tunneling Conductance Between Parallel Two Dimensional Electron Systems

1992-12-09

arxiv.org/abs/cond-mat/9212016v1

Physics

Condensed Matter

14 pages, 5 Fig. not included, revtex, IUcm92-005

Scientific paper

10.1103/PhysRevB.47.10619

We derive and evaluate expressions for the low temperature {\it dc} equilibrium tunneling conductance between parallel two-dimensional electron systems. Our theory is based on a linear-response formalism and on impurity-averaged perturbation theory. The disorder broadening of features in the dependence of tunneling conductance on sheet densities and in-plane magnetic field strengths is influenced both by the finite lifetime of electrons within the wells and by non-momentum-conserving tunneling events. Disorder vertex corrections are important only for weak in-plane magnetic fields and strong interwell impurity-potential correlations. We comment on the basis of our results on the possibility of using tunneling measurements to determine the lifetime of electrons in the quantum wells.

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