Magnetotransport properties of individual InAs nanowires

Details Magnetotransport properties of individual InAs nanowires Magnetotransport properties of individual InAs nanowires

2009-06-10

arxiv.org/abs/0906.1895v1

Physical Review B 79, 121311R(2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.79.121311

We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in diffusive conductors. The weak localization correction is modified to weak anti-localization (WAL) as the gate voltage is increased. We show that the gate voltage can be used to tune the phase coherence length ($l_\phi$) and spin-orbit length ($l_{so}$) by a factor of $\sim$ 2. In the high field and low temperature regime we observe the mobility of devices can be modified significantly as a function of magnetic field. We argue that the role of skipping orbits and the nature of surface scattering is essential in understanding high field magnetotransport in nanowires.

Affiliated with

Also associated with

No associations

Rating

Magnetotransport properties of individual InAs nanowires does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Magnetotransport properties of individual InAs nanowires, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetotransport properties of individual InAs nanowires will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-206770