Terahertz conductivity of localized photoinduced carriers in Mott insulator YTiO$_{3}$ at low excitation density, contrasted with metallic nature in band semiconductor Si

Details Terahertz conductivity of localized photoinduced carriers in Mott insulator YTiO$_{3}$ at low excitation density, contrasted with metallic nature in band semiconductor Si Terahertz conductivity of localized photoinduced carriers in Mott insulator YTiO$_{3}$ at low excitation density, contrasted with metallic nature in band semiconductor Si

2007-08-30

arxiv.org/abs/0708.4142v1

Physics

Condensed Matter

Strongly Correlated Electrons

16 pages,7 figures, to appear in J. Phys.: Condens. Matter

Scientific paper

10.1088/0953-8984/19/40/406224

We performed optical-pump terahertz-probe measurements of a Mott insulator YTiO$_{3}$ and a band semiconductor Si using a laser diode (1.47 eV) and a femtosecond pulse laser (1.55 eV). Both samples possess long energy-relaxation times (1.5 ms for YTiO$_{3}$ and 15 $\mu$s for Si); therefore, it is possible to extract terahertz complex conductivities of photoinduced carriers under equilibrium. We observed highly contrasting behavior - Drude conductivity in Si and localized conductivity possibly obeying the Jonscher law in YTiO$_{3}$. The carrier number at the highest carrier-concentration layer in YTiO$_{3}$ is estimated to be 0.015 per Ti site. Anisotropic conductivity of YTiO$_{3}$ is determined. Our study indicates that localized carriers might play an important role in the incipient formation of photoinduced metallic phases in Mott insulators. In addition, this study shows that the transfer-matrix method is effective for extracting an optical constant of a sample with a spatially inhomogeneous carrier distribution.

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