Origin of the efficient light emission from inversion domain boundaries in GaN

Details Origin of the efficient light emission from inversion domain boundaries in GaN Origin of the efficient light emission from inversion domain boundaries in GaN

2002-10-09

arxiv.org/abs/cond-mat/0210192v2

Physics

Condensed Matter

Materials Science

RevTeX 4 pages, 4 eps figures

Scientific paper

10.1063/1.1554776

Intentionally-produced inversion domain boundaries in GaN have been reported to be highly efficient recombination centers. Here I report a rationale for this phenomenon based on ab initio density-functional calculations. I also propose a model, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces.

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