Spin-orbit splittings in Si/SiGe quantum wells

Details Spin-orbit splittings in Si/SiGe quantum wells Spin-orbit splittings in Si/SiGe quantum wells

2009-08-17

arxiv.org/abs/0908.2417v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 9 figures

Scientific paper

We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions from the Rashba and Dresselhaus terms. We then determine the parameters by fitting tight-binding numerical results obtained using the quantitative nanoelectronic modeling tool, NEMO-3D. We describe the relevant parameters as a function of applied electric field and well width in our numerical simulations. For a silicon membrane, we find the bulk Rashba parameter to be linear in field, $\alpha = \alpha^1E_z$ with $\alpha^1 \simeq 2\times$ 10 $^{-5}$nm$^{-2}$. The dominant contribution to the spin-orbit splitting is from Dresselhaus-type terms, and the magnitude for a typical flat SiGe/Si/SiGe quantum well can be as high as 1$\mu$eV.

Affiliated with

Also associated with

No associations

Rating

Spin-orbit splittings in Si/SiGe quantum wells does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin-orbit splittings in Si/SiGe quantum wells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin-orbit splittings in Si/SiGe quantum wells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-19981