High-Resolution X-Ray Reflectivity Study of Thin Layered Pt-Electrodes for Integrated Ferroelectric Devices

Details High-Resolution X-Ray Reflectivity Study of Thin Layered Pt-Electrodes for Integrated Ferroelectric Devices High-Resolution X-Ray Reflectivity Study of Thin Layered Pt-Electrodes for Integrated Ferroelectric Devices

2000-10-28

arxiv.org/abs/cond-mat/0010467v1

J.Phys.D: Appl.Phys.34 (2001) A173-A178

Physics

Condensed Matter

Materials Science

presented at the X-TOP Conference on High-Resolution X-ray Diffraction and Topography (Sept.13-15 2000), submitted to Journal

Scientific paper

The structural interface properties of layered Pt/Ti/SiO2/Si electrodes have been investigated using high-resolution specular and diffuse x-ray reflectivity under grazing angles. Currently this multilayer system represents a technological standard as bottom electrodes for ferroelectric thin film applications. For the electronic and ferroelectric properties of integrated devices, the film-electrode interface is of crucial importance. We focused on Pt-100nm/Ti-10nm/SiO2/Si electrodes prepared under annealing conditions as employed in industrial processing, prior to the deposition of ferroelectric films. The comparison between annealed and non-annealed electrodes clearly revealed strong interfacial effects due to interdiffusion and oxidation of Ti, especially at the Pt-Ti interface. Migration of Ti into the Pt-layer results in a clear shift of the critical angle due to enclosure of TiO(2-x) within the Pt-layer. The heterogeneous distribution of TiO(2-x) suggests a diffusion mechanism mainly along the Pt-grain boundaries. At the SiO2 interface a relatively weakly oxidized, remaining Ti-layer of 20 Angstroem could be found, which is most probably correlated with the remaining adhesion to the substrate.

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