Electronic states and self-doping at a 45^o YBa2Cu3O7 grain boundary

Details Electronic states and self-doping at a 45^o YBa2Cu3O7 grain boundary Electronic states and self-doping at a 45^o YBa2Cu3O7 grain boundary

2009-05-04

arxiv.org/abs/0905.0341v1

Physics

Condensed Matter

Materials Science

5 pages, 4 figures

Scientific paper

The charge redistribution at grain boundaries determines the applicability of high-Tc superconductors in electronic devices, because the transport across the grains can be hindered considerably. We investigate the local charge transfer and the modification of the electronic states in the vicinity of the grain-grain interface by first principles calculations for a (normal-state) 45^o tilted [001] grain boundary in YBa2Cu3O7. Our results explain the suppressed interface transport and the influence of grain boundary doping in a quantitative manner, in accordance with the experimental situation. The charge redistribution is found to be strongly inhomogeneous, which has a substantial effect on transport properties since it gives rise to a self-doping of 0.10 (+/- 0.02) holes per Cu atom.

Affiliated with

Also associated with

No associations

Rating

Electronic states and self-doping at a 45^o YBa2Cu3O7 grain boundary does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electronic states and self-doping at a 45^o YBa2Cu3O7 grain boundary, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic states and self-doping at a 45^o YBa2Cu3O7 grain boundary will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-199288