Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2003-12-18
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
4 pages, in REVTEX, 3 figures
Scientific paper
We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level relative to the Fermi energy of conduction electrons. We argue that our results can explain the large tunneling timescales observed in experiments on random telegraph signals in ${\rm Si}$ metal-oxide-semiconductor field effect transistors.
Hastings Matthew B.
Martin Ivar
Mozyrsky Dima
Shnirman Alexander
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