Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

Details Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

2008-03-31

arxiv.org/abs/0803.4258v1

Physics

Condensed Matter

Materials Science

16 pages, 5 figures

Scientific paper

10.1103/PhysRevLett.102.026801

We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by temperature. We show that these unipolar RS are closely related and can be explained by a simple unified percolation picture.

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