Electric Field Induced Kondo Tunneling Through Double Quantum Dot

Details Electric Field Induced Kondo Tunneling Through Double Quantum Dot Electric Field Induced Kondo Tunneling Through Double Quantum Dot

2002-06-26

arxiv.org/abs/cond-mat/0206503v2

JETP Letters 77, 434-438 (2003)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, RevTeX, 4 eps figures included

Scientific paper

It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the renormalization group technique we derive scaling equations and calculate the differential conductance as a function of an auxiliary dc-bias for parallel DQD.

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