Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

Details Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

2001-03-22

arxiv.org/abs/cond-mat/0103473v1

Phys. Rev. B 64, 121201 (2001)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.64.121201

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.

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