Measurement of the conductance distribution function at a quantum Hall transition

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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10 pages, Revtex, 3 eps figures; final version with slight changes, accepted for publication in PRB Rapid Communications

Scientific paper

10.1103/PhysRevB.54.R17316

We study experimentally the reproducible conductance fluctuations between the quantum Hall plateaus in the conductance of two-terminal submicron silicon MOSFETs. For the dramatic fluctuations at the insulator-to-first-plateau transition we find a conductance distribution that is approximately uniform between zero and $e^2/h$. We point out that this is consistent with the prediction of random $S$-matrix theory for a conductor with single-channel leads in a magnetic field.

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