On Effective Electron Mass of Silicon MOSFET at Low Electron Density

Details On Effective Electron Mass of Silicon MOSFET at Low Electron Density On Effective Electron Mass of Silicon MOSFET at Low Electron Density

2002-11-21

arxiv.org/abs/cond-mat/0211482v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 2 figures. Published in JETP Letters

Scientific paper

10.1134/1.1525041

The trial wave function method developed in Ref.s \cite{gutz,brink} for the case of narrow {\it s}-band in a perfect crystal is adapted for calculation of the density dependence of the effective mass and the Lande factor in a dilute two-dimensional electron system. We find that the effective mass has a tendency to diverge at a certain critical concentration, whereas the $g$ factor remains finite.

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