Delay Analysis of Graphene Field-Effect Transistors

Details Delay Analysis of Graphene Field-Effect Transistors Delay Analysis of Graphene Field-Effect Transistors

2011-12-20

arxiv.org/abs/1112.4831v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures, accepted for publication in IEEE Electron Device Letters

Scientific paper

In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with a gate length of 210 nm, a current gain cut-off frequency fT of 18 GHz and 22 GHz is obtained before and after de-embedding. The extraction of the internal (Cgs,i, Cgd,i) and external capacitances (Cgs,ex and Cgd,ex) from the scaling behavior of the gate capacitances Cgs and Cgd allows the intrinsic ({\tau}_int), extrinsic ({\tau}_ext) and parasitic delays ({\tau}_par) to be obtained. In addition, the extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFETs structures.

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