Shielded Ohmic Contact (ShOC) Rectifier: A New Metal-Semiconductor Device with Excellent Forward and Reverse Characteristics

Details Shielded Ohmic Contact (ShOC) Rectifier: A New Metal-Semiconductor Device with Excellent Forward and Reverse Characteristics Shielded Ohmic Contact (ShOC) Rectifier: A New Metal-Semiconductor Device with Excellent Forward and Reverse Characteristics

2010-08-21

arxiv.org/abs/1008.3600v1

IEEE Trans. on Electron Devices, Vol.52, pp.130-132, January 2005

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

http://web.iitd.ac.in/~mamidala/

Scientific paper

We report a new structure, called the Shielded Ohmic Contact (ShOC) rectifier which utilizes trenches filled with a high barrier metal to shield an Ohmic contact during the reverse bias. When the device is forward biased, the Ohmic contact conducts with a low forward drop. However, when reverse biased, the Ohmic contact is completely shielded by the high barrier Schottky contact resulting in a low reverse leakage current. Two dimensional numerical simulation is used to evaluate and explain the superior performance of the proposed ShOC rectifier.

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