Spin current and electrical polarization in GaN double-barrier structures

Details Spin current and electrical polarization in GaN double-barrier structures Spin current and electrical polarization in GaN double-barrier structures

2007-06-21

arxiv.org/abs/0706.3240v1

Physics

Condensed Matter

Other Condensed Matter

13 pages, 6 figures

Scientific paper

10.1103/PhysRevB.76.245305

Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows engineering a zero magnetic field spin injection manipulating the lattice-mismatch strain with an Al-content in the barriers.

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