Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces

Details Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces

2011-08-18

arxiv.org/abs/1108.3669v1

Phys. Rev. B 84, 205301 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.84.205301

The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with a measurable Schottky barrier height, depending on the contact area of the Fe$_{3}$Si/Ge(111) junction. These results indicate that one should distinguish between intrinsic and extrinsic mechanisms for discussing the formation of the Schottky barrier at metal/Ge interfaces. This study will be developed for understanding FLP for almost all the metal/semiconductor interfaces.

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