Theory of carrier concentration-dependent electronic behavior in layered cobaltates

Details Theory of carrier concentration-dependent electronic behavior in layered cobaltates Theory of carrier concentration-dependent electronic behavior in layered cobaltates

2010-12-14

arxiv.org/abs/1012.3118v2

Phys. Rev. Lett. 106, 216401 (2011)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures

Scientific paper

A natural explanation for the carrier concentration-dependent electronic behavior in the layered cobaltates emerges within correlated-electron Hamiltonians with finite on-site and significant nearest neighbor hole-hole Coulomb repulsions. The nearest neighbor repulsion decreases hole double-occupancy below hole density 1/3, but increases the same at higher hole densities. Our conclusion is valid for both single-band and three-band extended Hubbard Hamiltonians, and sheds light on concentration-dependent $e_g^\prime$ hole occupancy within the latter.

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