Exchange effects on electron scattering through a quantum dot embedded in a two-dimensional semiconductor structure

Details Exchange effects on electron scattering through a quantum dot embedded in a two-dimensional semiconductor structure Exchange effects on electron scattering through a quantum dot embedded in a two-dimensional semiconductor structure

2007-07-03

arxiv.org/abs/0707.0398v2

Phys. Rev. B, 76, 165306 (2007)

Physics

Condensed Matter

Other Condensed Matter

11 pages, 4 figures

Scientific paper

10.1103/PhysRevB.76.165306

We have developed a theoretical method to study scattering processes of an incident electron through an N-electron quantum dot (QD) embedded in a two-dimensional (2D) semiconductor. The generalized Lippmann-Schwinger equations including the electron-electron exchange interaction in this system are solved for the continuum electron by using the method of continued fractions (MCF) combined with 2D partial-wave expansion technique. The method is applied to a one-electron QD case. Cross-sections are obtained for both the singlet and triplet couplings between the incident electron and the QD electron during the scattering. The total elastic cross-sections as well as the spin-flip scattering cross-sections resulting from the exchange potential are presented. Furthermore, inelastic scattering processes are also studied using a multichannel formalism of the MCF.

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