Mechanically-Induced Transport Switching Effect in Graphene-based Nanojunctions

Details Mechanically-Induced Transport Switching Effect in Graphene-based Nanojunctions Mechanically-Induced Transport Switching Effect in Graphene-based Nanojunctions

2011-02-22

arxiv.org/abs/1102.4627v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures

Scientific paper

We report a theoretical study suggesting a novel type of electronic switching effect, driven by the geometrical reconstruction of nanoscale graphene-based junctions. We considered junction struc- tures which have alternative metastable configurations transformed by rotations of local carbon dimers. The use of external mechanical strain allows a control of the energy barrier heights of the potential profiles and also changes the reaction character from endothermic to exothermic or vice-versa. The reshaping of the atomic details of the junction encode binary electronic ON or OFF states, with ON/OFF transmission ratio that can reach up to 10^4-10^5. Our results suggest the possibility to design modern logical switching devices or mechanophore sensors, monitored by mechanical strain and structural rearrangements.

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