Doping Induced Magnetization Plateaus

Details Doping Induced Magnetization Plateaus Doping Induced Magnetization Plateaus

1999-07-19

arxiv.org/abs/cond-mat/9907258v1

Phys. Rev. Lett. 83 (1999) 5579-5582

Physics

Condensed Matter

Strongly Correlated Electrons

RevTeX, 4 pp. incl. 3 figures

Scientific paper

10.1103/PhysRevLett.83.5579

The low temperature magnetization process of antiferromagnetic spin-S chains doped with mobile spin-(S-1/2) carriers is studied in an exactly solvable model. For sufficiently high magnetic fields the system is in a metallic phase with a finite gap for magnetic excitations. In this phase which exists for a large range of carrier concentrations x the zero temperature magnetization is determined by x alone. This leads to plateaus in the magnetization curve at a tunable fraction of the saturation magnetization. The critical behaviour at the edges of these plateaus is studied in detail.

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