Non-ballistic spin field-effect transistor

Details Non-ballistic spin field-effect transistor Non-ballistic spin field-effect transistor

2002-11-26

arxiv.org/abs/cond-mat/0211603v2

Phys. Rev. Lett. 90, 146801 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures included

Scientific paper

10.1103/PhysRevLett.90.146801

We propose a spin field-effect transistor based on spin-orbit (s-o) coupling of both the Rashba and the Dresselhaus types. Differently from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the (gate-controlled) Rashba interactions; these can be tuned to have equal strengths thus yielding k-independent eigenspinors even in two dimensions. We discuss implementations with two-dimensional devices and quantum wires. In the latter, our setup presents strictly parabolic dispersions which avoids complications arising from anticrossings of different bands.

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