Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices

Details Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices

1998-01-14

arxiv.org/abs/cond-mat/9801146v1

Physics

Condensed Matter

4 pages, 3 figures, submitted to Phys. Rev. B

Scientific paper

10.1016/S0038-1098(98)00357-3

Spin-bottlenecks are created in magnetic-tunnel-junction devices by spatial inhomogeneity in the relative resistances for up and down spins. We propose a simple electrical circuit model for these devices which incorporates spin-bottleneck effects and can be used to calculate their overall resistance and magnetoresistance. The model permits a simple understanding of the dependence of device magnetoresistance on spin diffusion lengths, tunneling magnetoresistance, and majority and minority spin resistivities in the ferromagnetic electrodes. The circuit model is in a good quantitative agreement with detailed transport calculations.

Affiliated with

Also associated with

No associations

Rating

Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-169890