The metal-insulator transition in semiconductors

Details The metal-insulator transition in semiconductors The metal-insulator transition in semiconductors

2009-02-25

arxiv.org/abs/0902.4350v1

Physics

Condensed Matter

Statistical Mechanics

3 pages, Conference paper (Semiconductors 2009, 28 Sep - 3 Oct 2009, Novosibirsk-Tomsk, Russia)

Scientific paper

The temperature dependence of the number density of elementary excitations in
a semiconductor with account for the temperature dependence of the band gap is
obtained. A local lattice distortion within a crystalline domain is discussed.

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