The metal-insulator transition in semiconductors

Physics – Condensed Matter – Statistical Mechanics

Scientific paper

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3 pages, Conference paper (Semiconductors 2009, 28 Sep - 3 Oct 2009, Novosibirsk-Tomsk, Russia)

Scientific paper

The temperature dependence of the number density of elementary excitations in
a semiconductor with account for the temperature dependence of the band gap is
obtained. A local lattice distortion within a crystalline domain is discussed.

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