Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain

Details Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain

2006-10-04

arxiv.org/abs/cond-mat/0610096v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

We report direct measurements of the spin-orbit interaction induced spin-splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin-splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2 x 10^{-4} strain. The results are in very good agreement with our numerical calculations of the strain-induced spin-splitting.

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