Independent Electronic and Magnetic Doping in (Ga,Mn)As Based Digital Ferromagnetic Heterostructures

Details Independent Electronic and Magnetic Doping in (Ga,Mn)As Based Digital Ferromagnetic Heterostructures Independent Electronic and Magnetic Doping in (Ga,Mn)As Based Digital Ferromagnetic Heterostructures

2003-03-21

arxiv.org/abs/cond-mat/0303461v1

Physics

Condensed Matter

Materials Science

Submitted to Physical Review B. 30 pages, 9 figures

Scientific paper

10.1103/PhysRevB.68.165328

Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving independent control of electronic doping in the ferromagnetic semiconductor (Ga,Mn)As. Samples are comprised of superlattices of 0.5 monolayer (ML) MnAs alternating with 20 ML GaAs and are grown by low temperature (230 C) atomic layer epitaxy (ALE). This allows for the reduction of excess As incorporation and hence the number of charge-compensating As-related defects. We grow a series of samples with either Be or Si doping in the GaAs spacers (p- and n-type dopants, respectively), and verify their structural quality by in situ reflection high-energy electron diffraction (RHEED) and ex situ x-ray diffraction. Magnetization measurements reveal ferromagnetic behavior over the entire doping range, and show no sign of MnAs precipitates. Finally, magneto-transport shows the giant planar Hall effect and strong (20%) resistance fluctuations that may be related to domain wall motion.

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