Interplay between electron-phonon couplings and disorder strength on the transport properties of organic semiconductors

Details Interplay between electron-phonon couplings and disorder strength on the transport properties of organic semiconductors Interplay between electron-phonon couplings and disorder strength on the transport properties of organic semiconductors

2011-09-28

arxiv.org/abs/1109.6342v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

The combined effect of bulk and interface electron-phonon couplings on the transport properties is investigated in a model for organic semiconductors gated with polarizable dielectrics. While the bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the interface coupling is dominant for the activated high $T$ contribution of localized polarons. In order to improve the description of the transport properties, the presence of disorder is needed in addition to electron-phonon couplings. The effects of a weak disorder largely enhance the activation energies of mobility and induce the small polaron formation at lower values of electron-phonon couplings in the experimentally relevant window $150 K

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