Multilayer technique developed for fabricating Nb-based single-electron devices

Details Multilayer technique developed for fabricating Nb-based single-electron devices Multilayer technique developed for fabricating Nb-based single-electron devices

1998-04-17

arxiv.org/abs/cond-mat/9804192v1

J. Vac. Sci. Technol. B, vol. 17, 230 (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 4 figures

Scientific paper

10.1116/1.590504

A reliable process has been developed for the fabrication of all-Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single electron transistor made of 0.1 square micrometer area junctions clearly shows the e-periodic Coulomb blockade modulation by a voltage applied to a gate.

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