Low-temperature magnetotransport of narrow-gap semiconductor FeSb2

Details Low-temperature magnetotransport of narrow-gap semiconductor FeSb2 Low-temperature magnetotransport of narrow-gap semiconductor FeSb2

2011-10-31

arxiv.org/abs/1110.6854v2

Phys. Rev. B 84, 205215 (2011)

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 5 figures, to be published in Phys. Rev. B

Scientific paper

We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a large Seebeck coefficient was observed. By applying a two-carrier model, we find that the carrier concentration decreases from 1 down to 10^-4 ppm/unit cell and the mobility increases from 2000 to 28000 cm2/Vs with decreasing temperature from 30 down to 4 K. At lower temperatures, the magnetoresistive behavior drastically changes and a negative magnetoresistance is observed at 3 K. These low-temperature behaviors are reminiscent of the low-temperature magnetotransport observed in doped semiconductors such as As-doped Ge, which is well described by a weak-localization picture. We argue a detailed electronic structure in FeSb2 inferred from our observations.

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