Resist model calibration using 2D developed patterns for low-k1 process optimization and wafer printing predictions

Details Resist model calibration using 2D developed patterns for low-k1 process optimization and wafer printing predictions Resist model calibration using 2D developed patterns for low-k1 process optimization and wafer printing predictions

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5567..434c&link_type=abstract

24th Annual BACUS Symposium on Photomask Technology. Edited by Staud, Wolfgang; Weed, J. Tracy. Proceedings of the SPIE, Volume

Physics

Scientific paper

We describe a new resist model calibration procedure and its implementation in LithoCruiser™. In addition to the resist calibration, LithoCruiser is used to perform simultaneous optimization for numerical aperture (NA), mask OPC, and illumination profile with built-in manufacturing constraints for ASML illumination diffractive optical elements (DOE). This calibration procedure uses a global optimization algorithm for resist parameter tuning, matching the simulated and measured 2D resist contours at a user-defined multiple CD sampling across the selected developed 2D resist patterns. Using lumped parameter type resist models and vector high-NA simulation engine, this resist calibration procedure showed an excellent calibration capability of max CD error range < +/-4nm for the CPL 70nm DRAM patterns. Calibration results for CPL 130nm contact hole patterns are also included in this manuscript. Dependency of the calibrated model parameters on lithography process (i.e., Quasar, C-Quad illumination and at different defocus) and further improvements to a more predictable resist model are discussed.

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