Surface currents and slope selection in crystal growth

Details Surface currents and slope selection in crystal growth Surface currents and slope selection in crystal growth

2006-01-30

arxiv.org/abs/cond-mat/0601655v2

Comptes Rendus Physique 7, 272-277 (2006)

Physics

Condensed Matter

Materials Science

6 pages. The text has been strongly revised and Fig.1 has been changed. Accepted for publication in the "Comptes Rendus Physiq

Scientific paper

10.1016/j.crhy.2006.03.009

We face the problem to determine the slope dependent current during the epitaxial growth process of a crystal surface. This current is proportional to delta=(p+) + (p-), where (p+/-) are the probabilities for an atom landing on a terrace to attach to the ascending (p+) or descending (p-) step. If the landing probability is spatially uniform, the current is proved to be proportional to the average (signed) distance traveled by an adatom before incorporation in the growing surface. The phenomenon of slope selection is determined by the vanishing of the asymmetry delta. We apply our results to the case of atoms feeling step edge barriers and downward funnelling, or step edge barriers and steering. In the general case, it is not correct to consider the slope dependent current j as a sum of separate contributions due to different mechanisms.

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