Rashba effect in the graphene/Ni(111) system

Details Rashba effect in the graphene/Ni(111) system Rashba effect in the graphene/Ni(111) system

2007-12-19

arxiv.org/abs/0712.3149v1

Physics

Condensed Matter

Materials Science

12 pages, 3 figures in JPEG-format

Scientific paper

10.1103/PhysRevLett.100.107602

Here, we report on angle-resolved photoemission studies of the electronic $\pi$ states of high-quality epitaxial graphene layer on a Ni(111) surface. In this system electron binding energy of the $\pi$ states shows a strong dependence on the magnetization reversal of the Ni film. The observed extraordinary large energy shift up to 225 meV of the graphene-derived $\pi$-band peak position for opposite magnetization directions is attributed to a manifestation of the Rashba interaction of spin-polarized electrons in the $\pi$ band with the large effective electric field at graphene/Ni interface. Our findings show that an electron spin in the graphene layer can be manipulated in a controlled way and have important implications for graphene-based spintronic devices.

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