Scaling of level statistics at the metal-insulator transition

Details Scaling of level statistics at the metal-insulator transition Scaling of level statistics at the metal-insulator transition

2001-12-10

arxiv.org/abs/cond-mat/0112171v1

in "Quantum Dynamics in Submicron Structures", Ed. by H. Cerdeira et al (NATO ASI Series, North-Holland, Kluwer Academic Publi

Physics

Condensed Matter

Disordered Systems and Neural Networks

6 pages, PDF, 6 fig, talk at the NATO Advanced Research Workshop on Submicron Quantum Dynamics, Trieste, Italy, June 1994

Scientific paper

Using the Anderson model for disordered systems the fluctuations in electron spectra near the metal--insulator transition were numerically calculated for lattices of sizes up to 28 x 28 x 28 sites. The results show a finite--size scaling of both the level spacing distribution and the variance of number of states in a given energy interval, that allows to locate the critical point and to determine the critical exponent of the localization length.

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