Vacancies in Hg1-xCdxTe

Details Vacancies in Hg1-xCdxTe Vacancies in Hg1-xCdxTe

Jun 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000jemat..29..729c&link_type=abstract

Journal of Electronic Materials, Volume 29, Issue 6, pp.729-731

Physics

11

Hgcdte, Vacancy Defects, Cdte, Phase Equilibria

Scientific paper

Measurements have been performed of the carrier concentrations in vacancy-doped Hg1-xCdxTe with x=0.22, 0.29, 0.45, and 0.5. Anneals to establish the carrier concentrations were performed on both the mercury- and tellurium-rich sides of the phase field. When these results were added to earlier data for x=0.2 and 0.4, and assuming that all vacancies are doubly ionized, then vacancy concentrations for all values of x and anneal temperature can be represented by simple equations. On the mercury side of the phase field, the vacancy concentrations varied as 2.50×1023(1-x) exp[-1.00/kT] for low concentrations, and as 3.97×107(1-x)1/3n{i/2/3} exp[-0.33/kT] for high concentrations, where ni is the intrinsic carrier concentration. On the tellurium rich side, the vacancy concentrations varied as 2.81 × 1022(1-x) exp[-0.65/kT] for low concentrations and as 1.92×107(1-x)1/3n{i/2/3} exp[-0.22/kT] for high concentrations.

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