Dephasing of two-spin states by electron-phonon interaction in semiconductor nanostructures: Spin-boson model with a dissipative reservoir

Details Dephasing of two-spin states by electron-phonon interaction in semiconductor nanostructures: Spin-boson model with a dissipative reservoir Dephasing of two-spin states by electron-phonon interaction in semiconductor nanostructures: Spin-boson model with a dissipative reservoir

2009-03-05

arxiv.org/abs/0903.1080v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures. Comments welcome

Scientific paper

We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and study its dependence on quantum dot parameters such as dot size and double dot separations, as well as the host materials (GaAs and Si). We find that electron-phonon interaction causes an initial Gaussian decay of the off-diagonal density matrix element in the singlet-triplet Hilbert space, and a long-time exponential decay originating from phonon relaxation.

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