Magnetotunneling Between Two-dimensional Electron Gases in InAs-AlSb-GaSb Heterostructures

Details Magnetotunneling Between Two-dimensional Electron Gases in InAs-AlSb-GaSb Heterostructures Magnetotunneling Between Two-dimensional Electron Gases in InAs-AlSb-GaSb Heterostructures

2003-04-02

arxiv.org/abs/cond-mat/0304035v2

Phys. Rev. B 68, p.035311 (July, 2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

RevTeX format including 4 figures; submit for publication

Scientific paper

10.1103/PhysRevB.68.035311

We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases formed at nominally identical InAs-AlSb interfaces most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same frequency. This result is explained quantitatively with a model of the conductance in which the 2D gases have different densities and can tunnel between Landau levels with different quantum indices. When the epitaxial growth conditions of the interfaces are optimized, the zero-bias magnetoconductance shows a single set of oscillations, thus proving that the asymmetry between the two electron gases can be eliminated.

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