Strain-Induced Conduction Band Spin Splitting in GaAs from First Principles Calculations

Details Strain-Induced Conduction Band Spin Splitting in GaAs from First Principles Calculations Strain-Induced Conduction Band Spin Splitting in GaAs from First Principles Calculations

2008-06-13

arxiv.org/abs/0806.2295v2

Phys. Rev. B 78, 075208 (2008)

Physics

Condensed Matter

Materials Science

8 pages, 4 figures, 1 table

Scientific paper

10.1103/PhysRevB.78.075208

We use a recently developed self-consistent GW approximation to present first principles calculations of the conduction band spin splitting in GaAs under [110] strain. The spin orbit interaction is taken into account as a perturbation to the scalar relativistic hamiltonian. These are the first calculations of conduction band spin splitting under deformation based on a quasiparticle approach; and because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. We also discuss the spin relaxation time under [110] strain and show that it exhibits an in-plane anisotropy, which can be exploited to obtain the magnitude and sign of the conduction band spin splitting experimentally.

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