Reply to cond-mat/0111504

Details Reply to cond-mat/0111504 Reply to cond-mat/0111504

2001-12-10

arxiv.org/abs/cond-mat/0112165v1

Physics

Condensed Matter

Materials Science

1 page, 1 figure

Scientific paper

We show that the choice of the sign of the hopping matrix in our impurity band model for disordered III-V diluted magnetic semiconductors [PRL 87, 107293 (2000); cond-mat/0111045] is justified: with this choice, the impurity band is placed inside the gap and it has a mobility edge, as expected for a disordered system. The other sign choice, suggested in cond-mat/0111504, leads to an unphysical description of the occupied states of the impurity band (extremely long tail, no mobility edge, no bulk ferromagnetism).

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