Interpreting Transistor Noise

Details Interpreting Transistor Noise Interpreting Transistor Noise

Oct 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010immag..11...61p&link_type=abstract

IEEE Microwave Magazine, Volume 11, Issue 6, p.61-69

Physics

Scientific paper

The simple noise models of field effect and bipolar transistors reviewed in this article are quite useful in engineering practice, as illustrated by measured and modeled results. The exact and approximate expressions for the noise parameters of FETs and bipolar transistors reveal certain common noise properties and some general noise properties of both devices. The usefulness of these expressions in interpreting the dependence of measured noise parameters on frequency, bias, and temperature and, consequently, in checking of consistency of measured data has been demonstrated.

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