Single-particle states in spherical Si/SiO$_2$ quantum dots

Details Single-particle states in spherical Si/SiO$_2$ quantum dots Single-particle states in spherical Si/SiO$_2$ quantum dots

2006-09-08

arxiv.org/abs/cond-mat/0609193v2

Phys. Rev. B 76, 085427 (2007)

Physics

Condensed Matter

Materials Science

8 pages, 5 figures

Scientific paper

10.1103/PhysRevB.76.085427

We calculate ground and excited electron and hole levels in spherical Si quantum dots inside SiO$_2$ in a multiband effective mass approximation. Luttinger Hamiltonian is used for holes and the strong anisotropy of the conduction electron effective mass in Si is taken into account. As boundary conditions for electron and hole wave functions we use continuity of the wave functions and the velocity density at the boundary of the quantum dots.

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