Density-dependent phonoriton states in highly excited semiconductors

Details Density-dependent phonoriton states in highly excited semiconductors Density-dependent phonoriton states in highly excited semiconductors

1995-08-14

arxiv.org/abs/cond-mat/9508046v1

Physics

Condensed Matter

ICTP preprint IC/95/226, Latex, 10 pages, 3 figures

Scientific paper

The dynamical aspects of the phonoriton state in highly-photoexcited semiconductors is studied theoretically. The effect of the exciton-exciton interaction and nonbosonic character of high-density excitons are taken into account. Using Green's function method and within the Random Phase Approximation it is shown that the phonoriton dispersion and damping are very sensitive to the exciton density, characterizing the excitation degree of semiconductors.

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