Domain walls in (Ga,Mn)As diluted magnetic semiconductor

Details Domain walls in (Ga,Mn)As diluted magnetic semiconductor Domain walls in (Ga,Mn)As diluted magnetic semiconductor

2008-02-12

arxiv.org/abs/0802.1574v1

Physical Review Letter, 100, 047202 (2008)

Physics

Condensed Matter

Materials Science

5 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.100.047202

We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 nm to 120 nm. The domain walls are of the N\'eel type and evolve from near-$90^{\circ}$ walls at low-temperatures to large angle [1$\bar{1}$0]-oriented walls and small angle [110]-oriented walls at higher temperatures.

Affiliated with

Also associated with

No associations

Rating

Domain walls in (Ga,Mn)As diluted magnetic semiconductor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Domain walls in (Ga,Mn)As diluted magnetic semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Domain walls in (Ga,Mn)As diluted magnetic semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-107929