Hopping conduction in partially compensated doped silicon

Details Hopping conduction in partially compensated doped silicon Hopping conduction in partially compensated doped silicon

Jul 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993phrvb..48.2312z&link_type=abstract

Physical Review B (Condensed Matter), Volume 48, Issue 4, July 15, 1993, pp.2312-2319

Physics

Condensed Matter

27

Low-Field Transport And Mobility, Piezoresistance, Elemental Semiconductors, Phonon-Electron And Phonon-Phonon Interactions, X- And Gamma-Ray Telescopes And Instrumentation

Scientific paper

We have measured the dc electrical resistance of partially compensated (5-50 %) ion-implanted Si:P,B (both n and p type), over the temperature range 0.05-30 K. The temperature behavior is consistent with the prediction of the model for variable-range hopping (VRH) with a Coulomb gap ρ(T)=ρ0exp(T0/T)1/2 over a temperature range 6.5

Affiliated with

Also associated with

No associations

Rating

Hopping conduction in partially compensated doped silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Hopping conduction in partially compensated doped silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hopping conduction in partially compensated doped silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1074268