Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate

Details Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate

2009-12-31

arxiv.org/abs/1001.0102v1

Phys. Rev. B 82, 020503(R) (2010)

Physics

Condensed Matter

Superconductivity

4 pages, 3 figures

Scientific paper

In order to study an intrinsic chemical potential jump between the hole- and electron-doped high-Tc superconductors, we have performed core-level X-ray photoemission spectroscopy (XPS) measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La_2-xSrxCuO4 and the electron-doped system Nd_2-xCexCuO4, we have estimated the true chemical potential jump between the hole- and electron-doped YLBLCO to be ~0.8 eV, which is much smaller than the optical gaps of 1.4-1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers.

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