Physics – Condensed Matter – Materials Science
Scientific paper
2003-03-31
Physics
Condensed Matter
Materials Science
10 pages, 7 figures, 1 table, the original paper is in print in J. Appl. Phys
Scientific paper
10.1063/1.1566455
Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy images (TEM) shows that the Ge islands are preferentially grown at the sidewalls of pure Si stripes along [-110] direction at 650o C or along the trenches, whereas most of the Ge islands are formed on the top terrace when the patterned stripes are covered by a strained GeSi buffer layer. Reducing the growth temperature to 600oC results in a nucleation of Ge islands both on the top terrace and at the sidewall of pure Si stripes. A qualitative analysis, based on the growth kinetics, demonstrates that the step structure of the stripes, the external strain field and the local critical wetting layer thickness for the islands formation contribute to the preferential positioning of Ge islands on the stripes.
Bauer Gerry
Halilovic A.
Muhlberger M.
Schaffler Friedrich
Zhong Zhenyang
No associations
LandOfFree
Positioning of self-assembled Ge islands on stripe-patterned Si (001) substrates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Positioning of self-assembled Ge islands on stripe-patterned Si (001) substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Positioning of self-assembled Ge islands on stripe-patterned Si (001) substrates will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-101767