Controlling the efficiency of spin injection into graphene by carrier drift

Details Controlling the efficiency of spin injection into graphene by carrier drift Controlling the efficiency of spin injection into graphene by carrier drift

2008-11-18

arxiv.org/abs/0811.2960v1

Phys. Rev. B 79, 081402(R) (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 color figures

Scientific paper

10.1103/PhysRevB.79.081402

Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room temperature non-local spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 25%, where electrical contact is achieved through relatively transparent pinholes in the oxide. This value is further enhanced to 43% by applying a DC current bias on the injector electrodes, that causes carrier drift away from the contact. A reverse bias reduces the AC spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.

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