Hooge's Constant of Carbon Nanotube Field Effect Transistors

Details Hooge's Constant of Carbon Nanotube Field Effect Transistors Hooge's Constant of Carbon Nanotube Field Effect Transistors

2006-01-19

arxiv.org/abs/cond-mat/0601458v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.2206685

The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air.

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