A high-energy, high-current ion implantation system

Details A high-energy, high-current ion implantation system A high-energy, high-current ion implantation system

Jan 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985nimpb...6...27r&link_type=abstract

Nuclear Instruments and Methods in Physics Research Section B, Volume 6, Issue 1-2, p. 27-34.

Physics

3

Scientific paper

High current (Pre-DepTM) ion implanters, operating at 80 keV, have met a need in the semiconductor industry. For certain processes, higher energies are required, either to penetrate a surface layer or to place the dopant ion at a greater depth. The Eaton/Nova Model NV10-160 Pre-DepTM Ion Implanter has been developed to meet those special needs. Beam currents as high as 10.0 mA are available at energies up to 160 keV for routine production applications. The system has also been qualified for low current, low dose operation (1011 ions cm-2) and this unique versatility provides the Process and Equipment Engineers with a powerful new tool.
The Model NV10-160 also utilizes the Nova-designed, double disk interchange processing system to minimize inactive beam time so that wafer throughputs, up to 300 wafers/h, are achievable on a routine basis. DatalockTM, a computer driven implant monitoring system and AT-4, the Nova cassette-to-cassette wafer loader, are available as standard options.
As a production machine, the Model NV10-160 with its high throughput capability, will reduce the implant cost per wafer significantly for doses above 10 × 1015 ions/cm2. Performance patterns are now emerging as some twenty-five systems have now been shipped. This paper summarizes the more important characteristics and reviews the major design features of the NV10-160.

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