Physics
Scientific paper
Oct 2006
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006jajap..45.8457j&link_type=abstract
Japanese Journal of Applied Physics, Volume 45, Issue 10B, pp. 8457 (2006).
Physics
1
Scientific paper
Indium oxide thin films have potential applications as cathodes in top-emitting organic light-emitting diodes (TEOLEDs). This study examined the characteristics of transparent conducting indium oxide (IO) films deposited by an oxygen ion-beam-assisted-deposition (IBAD) as a function of the applied oxygen ion energy (Va). When TEOLED devices consisting of glass/Ag (100 nm)/ITO (125 nm)/2-TNATA (30 nm)/NPB (15 nm)/Alq3 (55 nm)/LiF (1 nm)/Al (2 nm)/Au (20 nm)/IO (100 nm) were fabricated at a lower Va, a lower turn-on voltage was observed even though the maximum luminance (32,000 cd/m2) was similar one another. A Va of approximately +50 V produced an IO film with a resistivity of 8.5× 10-4 Ω\cdotcm and a transmittance of 85%. The definition (I-V) characteristics of TEOLED devices with a cathode layer of Al (2 nm)/Au (20 nm)/IO (100 nm) were similar to the device fabricated with Al (2 nm)/Au (20 nm) only.
Bae Jeong Woon
Jeong Chang Hyun
Kim Min-Soo
Lee June Hee
Lim Jong Tae
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